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Volumn 32, Issue 5 PART 2, 1996, Pages 4606-4608

Simulated magnetoresistive behavior of geometrically assymmetric spin valves

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COPPER; MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; MAGNETIC FILMS; MAGNETORESISTANCE; MATHEMATICAL MODELS; NICKEL ALLOYS;

EID: 0030245167     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.539093     Document Type: Article
Times cited : (1)

References (3)
  • 2
    • 0002296165 scopus 로고    scopus 로고
    • Simulating device size effects on magnetization pinning mechanisms in spin valves,"
    • J. O. Oti, R. W. Cross, S. E. Russek and Y. K. Kim, "Simulating device size effects on magnetization pinning mechanisms in spin valves," J. Appl. Phys, 79 (8), 6386 (1996).
    • (1996) J. Appl. Phys , vol.79 , Issue.8 , pp. 6386
    • Oti, J.O.1    Cross, R.W.2    Russek, S.E.3    Kim, Y.K.4
  • 3
    • 0029403459 scopus 로고
    • Magnetoresistance of thin-film NiFe devices exhibiting single-domain behavior
    • R. W. Cross, J. O. Oti, S. E. Russek, T. Silva and Y. K. Kim, "Magnetoresistance of thin-film NiFe devices exhibiting single-domain behavior," IEEE Trans. Magn., 31, 3358 (1995).
    • (1995) IEEE Trans. Magn. , vol.31 , pp. 3358
    • Cross, R.W.1    Oti, J.O.2    Russek, S.E.3    Silva, T.4    Kim, Y.K.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.