Measurement of single interface trap capture cross sections with charge pumping

Applied Physics Letters

Volumn 70, Issue 25, 1997, Pages 3380-3382

  Saks, N S ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001619018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119177     Document Type: Article

References (13)

1. M. J. Kirton and M. J. Uren, Adv. Phys. 38, 367 (1989).
2. G. Groeseneken, I. DeWolf, R. Bellens, and H. E. Maes, Proceedings of the 1994 ESSDERC, edited by C. Hill and P. Ashburn (Editions Frontieres, 1994), p. 609.
3. G. V. Groeseneken, I. DeWolf, R. Bellens, and H. E. Maes, IEEE Trans. Electron Devices 43, 940 (1996).
4. N. S. Saks, G. Groeseneken, and I. DeWolf, Appl. Phys. Lett. 68, 1383 (1996).
5. N. S. Saks (unpublished).
6. Experimental devices were fabricated by the MOSIS service, Information 2 Sciences Institute, Marina del Rey, CA. N-channel FETs from the same chips were used in Ref. 4.
7. G. Groeseneken, H. E. Maes, N. Beltran, and R. F. DeKeersmaecker, IEEE Trans. Electron Devices 13, 42 (1984).
8. s typically differed by less than a factor of 2.
9. d≪kT).
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Eq. (39) and related discussion, p. 446.
11. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), Ch. 7.
12. 2 interface due to a threshold adjust implant. It should be possible to accurately account for this effect with improved software tools.
13. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967).