Dynamic input capacitance of single-electron transistors and the effect on charge-sensitive electrometers

Journal of Applied Physics

Volumn 87, Issue 12, 2000, Pages 8570-8574

  Zimmerman, Neil M ^a   Keller, Mark W ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001617879     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373580     Document Type: Article

References (11)

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2. H. Grabert and M. H. Devoret, Single Charge Tunneling (Plenum, New York, 1992), Vol. 294.
3. T, and thus not change any of the general conclusions.
4. N. M. Zimmerman, J. L. Cobb, and A. F. Clark, IEEE Trans. Instrum. Meas. 46, 294 (1997).
5. E. R. Williams, R. N. Ghosh, and J. M. Martinis, J. Res. Natl. Inst. Stand. Technol. 97, 299 (1992).
6. M. W. Keller, A. L. Eichenberger, J. M. Martinis, and N. M. Zimmerman, Science 285, 1706 (1999).
7. M. W. Keller, J. M. Martinis, N. M. Zimmerman, and A. H. Steinbach, Appl. Phys. Lett. 69, 1804 (1996).
8. Simulation results obtained using the software package SIMON (http:// homel.gte.net/kittypaw/index.htm) developed by Christoph Wasshuber. The identification of a specific commercial product does not imply endorsement by NIST, nor does it imply that the product identified is the best available for a particular purpose.
9. SETT. For more on the location of charge noise sources in SET transistors. See Refs. 10 and 11.
10. N. M. Zimmerman, J. L. Cobb, and A. F. Clark, Phys. Rev. B 56, 7675 (1997).
11. A. B. Zorin, F.-J. Ahlers, J. Niemeyer, T. Weimann, H. Wolf, V. A. Krupenin, and S. V. Lotkhov, Phys. Rev. B 53, 13 682 (1996).