Dynamic Properties of InAs Self-Assembled Quantum Dots for Spectral Hole Burning Memory Application

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 421-424

  Horiguchi, N ^a   Futatsugi, T ^a   Nakata, Y ^a   Yokoyama, N ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTRA; ELECTRON TRANSPORT PROPERTIES; EQUIVALENT CIRCUITS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; NANOCRYSTALS; QUANTUM CHEMISTRY; SEMICONDUCTOR QUANTUM DOTS; CALCULATIONS; ELECTRIC FREQUENCY MEASUREMENT; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR STORAGE;

BARRIER THICKNESS; DYNAMICS PROPERTIES; ELECTRON TRANSPORT; FREQUENCIES DEPENDENCE; GAAS SUBSTRATES; INAS SELF-ASSEMBLED QUANTUM DOTS; MEMORY APPLICATIONS; PICOSECOND RANGE; SPECTRAL-HOLE BURNING; TIME-CONSTANTS;

INDIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

EQUIVALENT CIRCUIT CALCULATIONS; FREQUENCY DEPENDENCE; SPECTRAL HOLE BURNING MEMORY; TIME CONSTANT;

EID: 0030398613     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553617     Document Type: Conference Paper

References (6)

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