High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 91-94

  Miura, T ^a   Shimura, T ^a   Mori, K ^a   Uneme, Y ^a   Nakano, H ^a   Inoue, A ^a   Hattori, R ^a   Tanino, N ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; ELECTRIC POWER SUPPLIES TO APPARATUS; HEAT RESISTANCE; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; PHASE SHIFT KEYING; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CHANNEL LEAKAGE POWER; DIGITAL CELLULAR PHONES; POWER ADDED EFFICIENCY; THERMAL FLOW ANALYSIS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030392170     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)