High-efficiency, small-chip AlGaAs/GaAs power HBTs for low-voltage digital cellular phones

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1997, Pages 1307-1310

  Hayama, N ^a   Kim, C W ^a   Takahashi, H ^a   Goto, N ^a   Honjo, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR TELEPHONE SYSTEMS; DIGITAL COMMUNICATION SYSTEMS; HEAT RESISTANCE; INTEGRATED CIRCUIT LAYOUT; MESFET DEVICES; MICROPROCESSOR CHIPS; NATURAL FREQUENCIES; OPTIMIZATION; PHASE SHIFT KEYING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

OFFSET FREQUENCY; POWER ADDED EFFICIENCY (PAE); QUADRATURE PHASE SHIFT KEYING (QPSK);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030711811     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)