Plasma induced charging damage on 30 angstroms gate oxide antenna MOS capacitor structure during polysilicon gate etch

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1997, Pages 25-28

  Ma, Shawming ^a   Chi, Chi,u ^a   Bayoumi, Amr ^a   Langley, Brian ^a   Cao, Min ^a   Marcoux, Paul ^a   Greene, Wayne ^a   Ray, Gary ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

PLASMA INDUCED CHARGING DAMAGE (PID); UNDOPED POLYSILICON GATES;

MOSFET DEVICES;

EID: 0030644845     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)