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Volumn 14, Issue 1, 1996, Pages 96-101
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Polysilicon gate etching in high density plasmas. I. Process optimization using a chlorine-based chemistry
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Author keywords
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Indexed keywords
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EID: 0002560086
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.588441 Document Type: Article |
Times cited : (32)
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References (19)
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