Generation of misfit dislocations due to thermally induced strain - a study by temperature-dependent HRXRD

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 447-451

  Grossmann V ^a   Heinke, H ^a   Leonardi, K ^a   Hommel, D ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; HEATING; SCATTERING; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

DIFFUSE SCATTERING; HIGH RESOLUTION X RAY DIFFRACTION; LATERAL LATTICE MISMATCH; PLASTIC STRAIN RELAXATION; THERMAL STRAIN;

DISLOCATIONS (CRYSTALS);

EID: 0001560811     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00127-5     Document Type: Article

References (11)

1. Matsumoto T., Iijima T., Ishida T. Jpn. J. Appl. Phys. 27:1988;L892.
2. Thomas R.J., Rockwell B., Chandrasekhar H.R., Chandrasekhar M., Ramdas A.K., Kobayashi M., Gunshor R.L. J. Appl. Phys. 78:1995;6569.
3. Großmann V., Behringer M., Heinke H., Hommel D. J. Crystal Growth. 184/185:1998;100.
4. Kaganer V.M., Köhler R., Schmidbauer M., Opitz R., Jenichen B. Phys. Rev. B. 55:1997;1793.
5. Ohkawa K., Behringer M., Wenisch H., Fehrer M., Jobst B., Hommel D., Kuttler M., Strassburg M., Bimberg D., Bacher G., Tönnies D., Forchel A. Phys. Status Solidi B. 202:1997;683.
6. Wenisch H., Fehrer M., Klude M., Isemann A., Großmann V., Heinke H., Ohkawa K., Hommel D., Prokesch M., Rinas U., Hartmann H. J. Crystal Growth. 201/202:1999;933.
7. Reß H.R., Spahn W., Ebel R., Nürnberger J., Keller M., Schäfer H., Korn M., Ehinger M., Faschinger W., Landwehr G. J. Crystal Growth. 184/185:1998;90.
8. Farrell H.H., deMiguel J.L., Tamargo M.C. J. Appl. Phys. 65:1989;4084.
9. Wang V.S., Matyi R.J. J. Appl. Phys. 72:1992;5158.
10. Goorsky M.S., Meshkinpour M., Streit D.C., Block T.R. J. Phys. D. 28:1995;A92.
11. Kidd P., Fewster P.F., Andrew N.L. J. Phys. D. 28:1995;A133.