Fabrication of spin-current field-effect transistor structures

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 1215-1219

  Cabbibo, A ^a   Childress, J R ^a   Pearton, S J ^a   Ren, F ^b   Kuo, J M ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; BI-LAYER; CHANNEL DEVICE; CURRENT FIELDS; CURRENT INJECTIONS; CURRENT MODULATION; ELECTRONIC DEVICE; FERROMAGNETIC CONTACTS; GAAS; GAAS/ALGAAS; GATE CONTACT; GATE WIDTHS; HIGH ELECTRON MOBILITY; INTERNAL MAGNETIC FIELDS; ION MILLING; MAGNETIC CONTACTS; MATERIALS SYSTEMS; NARROW-GAP SEMICONDUCTORS; OHMIC BEHAVIOR; SOURCE AND DRAINS; SPIN-DOWN ELECTRONS; SPIN-POLARIZED ELECTRONS; TRANSPORT OF SPIN; UNDOPED CHANNELS; WET-CHEMICAL ETCHING;

ALUMINUM GALLIUM ARSENIDE; DISTILLATION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; FABRICATION; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETIC FIELDS; OHMIC CONTACTS; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; WET ETCHING;

TWO DIMENSIONAL ELECTRON GAS;

EID: 0001398695     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580596     Document Type: Article

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