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Volumn 61, Issue 3, 2000, Pages 1992-1998

Intrinsic quantum dots in partially ordered bulk (GaIn)P

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EID: 0001422952     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.1992     Document Type: Article
Times cited : (24)

References (34)
  • 4
    • 0004133466 scopus 로고
    • D. P. Bour, in Quantum Well Lasers, edited by P. S. Zory (Academic Press, Boston, 1993), p. 415.
    • (1993) Quantum Well Lasers , pp. 415
    • Bour, D.1
  • 17
    • 36449004415 scopus 로고
    • These values were extracted from the valence-band splitting measured by photoluminescence excitation spectroscopy and the calculations in S.-H. Wei, D. B. Laks, and A. Zunger, Appl. Phys. Lett. 62, 1937 (1993).
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 1937
    • Laks, D.1    Zunger, A.2
  • 26
    • 5244354958 scopus 로고
    • The lateral confinement of a 100-320 nm square potential well with disordered (GaIn)P as barrier material is less than 1 meV and can be neglected. The quantization energy in growth direction coming from the 10 nm quantum well only leads to a slight shift of the energetic position of 6 meV. M. Burkhard, A. Englert, C. Geng, F. Scholz, and H. Schweizer, in Optoelectronic Materials: Ordering, Composition Modulation, and Self-Assembled Structures, edited by E. D. Jones, A. Mascarenhas, and P. Petroff, MRS Symposia Proceedings No. 417 (Materials Research Society, Pittsburgh, 1995), p. 67.
    • (1995) MRS Symposia Proceedings , pp. 67
    • Burkhard, M.1    Englert, A.2    Geng, C.3    Scholz, F.4    Schweizer, H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.