Optical properties of InAs quantum dots formed on GaAs pyramids

Applied Physics Letters

Volumn 77, Issue 3, 2000, Pages 385-387

  An, Haiyan ^a,b   Motohisa, Junichi ^b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001351759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126984     Document Type: Article

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