High-pressure Raman scattering of biaxially strained GaN on GaAs

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 225-230

  Siegle, H ^a   Goni, A R ^a   Thomsen, C ^a   Ulrich, C ^a   Syassen, K ^a   Schottker, B ^a   As, D J ^a   Schikora, D ^a  

^a Inst fur Festkorperphysik   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH PRESSURE EFFECTS IN SOLIDS; NITRIDES; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; STRAIN; SUBSTRATES;

BIAXIAL; GRUNEISEN PARAMETERS;

SEMICONDUCTOR GROWTH;

EID: 0030718034     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-225     Document Type: Conference Paper

References (14)