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Volumn 3213, Issue , 1997, Pages 79-90
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Scatterometry measurements for process monitoring of polysilicon gate etch
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Author keywords
Atomic force microscopy; Critical dimension; Metrology; Process control; Process monitoring; Scatterometry
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Indexed keywords
ATOMIC FORCE MICROSCOPES;
CRITICAL DIMENSION;
ETCH PROCESSES;
FILM STRUCTURES;
GATE ETCH;
IN LINES;
METROLOGY;
PATTERNED PHOTORESISTS;
POLYSILICON GATE ETCH;
PROCESS VARIATIONS;
REFLECTION COATINGS;
SCANNING ELECTRONS;
SCATTEROMETER;
SCATTEROMETRY;
SIGNAL DIFFERENCES;
SILICON DIOXIDES;
ULTRA VIOLETS;
WAFER PROCESSING;
ATOMIC FORCE MICROSCOPY;
ATOMIC PHYSICS;
ATOMS;
CRYSTAL ATOMIC STRUCTURE;
DIELECTRIC LOSSES;
INTEGRATED CIRCUITS;
LITHOGRAPHY;
METEOROLOGICAL INSTRUMENTS;
PH EFFECTS;
POLYSILICON;
PROCESS ENGINEERING;
PROCESS MONITORING;
QUALITY CONTROL;
SCANNING;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICA;
SILICON WAFERS;
PROCESS CONTROL;
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EID: 0001268891
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.284624 Document Type: Conference Paper |
Times cited : (21)
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References (5)
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