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Volumn 3213, Issue , 1997, Pages 79-90

Scatterometry measurements for process monitoring of polysilicon gate etch

Author keywords

Atomic force microscopy; Critical dimension; Metrology; Process control; Process monitoring; Scatterometry

Indexed keywords

ATOMIC FORCE MICROSCOPES; CRITICAL DIMENSION; ETCH PROCESSES; FILM STRUCTURES; GATE ETCH; IN LINES; METROLOGY; PATTERNED PHOTORESISTS; POLYSILICON GATE ETCH; PROCESS VARIATIONS; REFLECTION COATINGS; SCANNING ELECTRONS; SCATTEROMETER; SCATTEROMETRY; SIGNAL DIFFERENCES; SILICON DIOXIDES; ULTRA VIOLETS; WAFER PROCESSING;

EID: 0001268891     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284624     Document Type: Conference Paper
Times cited : (21)

References (5)
  • 2
    • 0029346243 scopus 로고
    • Metrology of subwavelength photoresist gratings using optical scatterometry
    • Jul/Aug, pp
    • C. J. Raymond, M. R. Murnane, S. S. H. Naqvi, and J. R. McNeil, "Metrology of subwavelength photoresist gratings using optical scatterometry," J. Vac. Sci. Technol. Jul/Aug, pp. 1484-1495, 1995.
    • (1995) J. Vac. Sci. Technol , pp. 1484-1495
    • Raymond, C.J.1    Murnane, M.R.2    Naqvi, S.S.H.3    McNeil, J.R.4
  • 4
    • 0029422903 scopus 로고    scopus 로고
    • M. R. Murnane, C. J. Raymond, S. L. Prins, S. S. H. Naqvi, and J. R. McNeil, Scatterometry for 0.24-0.70 μm developed photoresist metrology, in Integrated Circuit Metrology, Inspection, and Process Control IX, M. H. Bennett, ed., Proc. SPIE 2439, pp. 427-436, 1995.
    • M. R. Murnane, C. J. Raymond, S. L. Prins, S. S. H. Naqvi, and J. R. McNeil, "Scatterometry for 0.24-0.70 μm developed photoresist metrology," in Integrated Circuit Metrology, Inspection, and Process Control IX, M. H. Bennett, ed., Proc. SPIE 2439, pp. 427-436, 1995.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.