0.15 μm Electron beam direct writing for Gbit dynamic random access memory fabrication

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7535-7540

  Nakajima, Ken ^a   Yamashita, Hiroshi ^a   Kojima, Yoshikatsu ^a   Hirasawa, Satomi ^a   Tamura, Takao ^a   Yamada, Yasuhisa ^a   Tokunaga, Kenichi ^a   Ema, Takahiro ^a   Kondoh, Kenji ^a   Onoda, Naka ^a   Nozue, Hiroshi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Cell projection; DRAM; Electron beam direct writing; Proximity effect correction; Single layer resist system

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; MASKS; PHOTORESISTS; RANDOM ACCESS STORAGE;

CELL PROJECTION (CP) MASK PREPARATION TECHNIQUE; DYNAMIC RANDOM ACCESS MEMORY (DRAM); ELECTRON BEAM DIRECT WRITING TECHNIQUES; PROXIMITY EFFECT CORRECTION;

ELECTRON BEAM LITHOGRAPHY;

EID: 5244258045     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7535     Document Type: Article

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