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Journal of Applied Physics

Volumn 77, Issue 5, 1995, Pages 1888-1896

Two-dimensional surface dopant profiling in silicon using scanning Kelvin probe microscopy

(7) Henning, Albert K a Hochwitz, Todd a Slinkman, James b Never, James b Hoffmann, Steven b Kaszuba, Phil b Daghlian, Charles c

a DARTMOUTH COLLEGE (United States)

b IBM MICROELECTRONICS (United States)

c DARTMOUTH COLLEGE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36448999364 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.358819 Document Type: Article

Times cited : (180)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.