Structure and formation mechanism of Ge E′center from divalent defects in ge-doped SiO2glass

Physical Review Letters

Volumn 84, Issue 7, 2000, Pages 1475-1478

  Uchino, Takashi ^a   Takahashi, Masahide ^a   Yoko, Toshinobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001008447     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.1475     Document Type: Article

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