Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1927-1931

  Lin, Mark ^a   Chang, Chun Yen ^a   Huang, Tiao Yuan ^a   Shieh, Win Yi ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Hsin Chu Science Based Industrial Park   (Taiwan)

Author keywords

Capacitor; DRAM; RTN; RTN2O; Rugged poly Si

Indexed keywords

EID: 0000995633     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1927     Document Type: Article

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