Analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theory

Semiconductor Science and Technology

Volumn 14, Issue 3, 1999, Pages 211-214

  Kearney, M J ^a   Horrell, A I ^a  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MULTIPLE SCATTERING THEORY; SELF CONSISTENT THEORY;

CARRIER MOBILITY;

EID: 0032664613     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/3/001     Document Type: Article

References (8)

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8. Kearney M J and Horrell A I 1997 Semicond. Sci. Technol. 13 174