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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 960-964

A high-performance 0.05 μm SOI MOS FET: Possibility of velocity overshoot

(5) Ohuchi, Kazuya a Ohba, Ryuji a Niiyama, Hiromi a Nakajima, Kazuaki a Mizuno, Tomohisa a

Author keywords

Lattice temperature; Mobility; MOS FET; Nonstationary transport; Self heating; SOI; Transconductance; Velocity overshoot

Indexed keywords

ELECTRIC RESISTANCE; FABRICATION; GATES (TRANSISTOR); PERFORMANCE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; VELOCITY;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELECTRON VELOCITY; GATE OXIDES; MOBILITY DEGRADATION; SELF HEATING; SIMOX WAFERS; VELOCITY OVERSHOOT;

MOSFET DEVICES;

EID: 0030080481 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.960 Document Type: Article

Times cited : (9)

References (12)

1
- 0024073264
- G. A. Sai-Halasz, M. R. Wordeman, D. P. Kern, S. Rishton and E. Ganin: IEEE Electron Device Lett. 9 (1988) 464.
- (1988) IEEE Electron Device Lett. , vol.9 , pp. 464
- Sai-Halasz, G.A.¹ Wordeman, M.R.² Kern, D.P.³ Rishton, S.⁴ Ganin, E.⁵

2
- 0028259940
- K. Natori: Jpn. J. Appl. Phys. 33 (1994) 554.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 554
- Natori, K.¹

3
- 84944378006
- L. Su, J. E. Chung, D. A. Antoniadis, K. E. Goodson and M. I. Flik: IEEE Trans. Electron Devices 41 (1994) 69.
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 69
- Su, L.¹ Chung, J.E.² Antoniadis, D.A.³ Goodson, K.E.⁴ Flik, M.I.⁵

4
- 0029274172
- D. A. Dallmann and K. Shenai: IEEE Trans. Electron Devices 42 (1995) 489
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 489
- Dallmann, D.A.¹ Shenai, K.²

5
- 0018468995
- K. Terada and H. Muta: Jpn. J. Appl. Phys. 18 (1979) 953.
- (1979) Jpn. J. Appl. Phys. , vol.18 , pp. 953
- Terada, K.¹ Muta, H.²

6
- 0024178927
- IEEE, Philadelphia
- S. Takagi, M. Iwase and A. Toriumi: Int. Electron Device Meet. Tech. Dig., San Francisco (IEEE, Philadelphia, 1988) p. 398
- (1988) Int. Electron Device Meet. Tech. Dig., San Francisco , pp. 398
- Takagi, S.¹ Iwase, M.² Toriumi, A.³

7
- 4243070498
- Japan Society of Applied Physics and Related Societies, Kanagawa, March [in Japanese]
- J. Koga, S. Takagi and A. Toriumi: Ext. Abstr. 42nd Spring Meet., Japan Society of Applied Physics and Related Societies, Kanagawa, March 1995, 29p-R-11 [in Japanese].
- (1995) Ext. Abstr. 42nd Spring Meet.
- Koga, J.¹ Takagi, S.² Toriumi, A.³

8
- 4243200117
- submitted Washington, D.C.
- A. Toriumi: submitted to Int. Electron Device Meet. Tech. Dig., Washington, D.C., 1995
- (1995) Int. Electron Device Meet. Tech. Dig.
- Toriumi, A.¹

9
- 4243159476
- Copper Mountain, Colorado, April
- K. Matsuzawa, I. Kamohara and T. Wada: Proc. Seventh Int. Conf. Numerical Analysis of Semiconductor Devices and Integrated Circuits, Copper Mountain, Colorado, April 1991, p. 173
- (1991) Proc. Seventh Int. Conf. Numerical Analysis of Semiconductor Devices and Integrated Circuits , pp. 173
- Matsuzawa, K.¹ Kamohara, I.² Wada, T.³

10
- 0022044296
- G. Baccarani and M. Wordeman: Solid State Electron. 28 (1985) 407.
- (1985) Solid State Electron. , vol.28 , pp. 407
- Baccarani, G.¹ Wordeman, M.²

11
- 0026105521
- C. L. Gardner: IEEE Trans. Electron Devices 38 (1991) 392.
- (1991) IEEE Trans. Electron Devices , vol.38 , pp. 392
- Gardner, C.L.¹

12
- 0028747841
- S. Takagi, A. Toriumi, M. Iwase and H. Tango: IEEE Trans. Electron Devices 41 (1994) 2357.
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 2357
- Takagi, S.¹ Toriumi, A.² Iwase, M.³ Tango, H.⁴

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