Ionized impurity scattering of the two-dimensional electron system in GaAs/AlxGa1-xAs heterointerface

Surface Science

Volumn 391, Issue 1-3, 1997, Pages 81-88

  Fu, Y ^a   Willander, M ^a  

^a UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

Heterointerface; Impurity scattering; Two dimensional electron gas

Indexed keywords

BAND STRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM ARSENIDE; IONIZED IMPURITY SCATTERING; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0031277082     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00457-3     Document Type: Article

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