Positive ions as growth precursors in plasma enhanced chemical vapor deposition of hydrogenated amorphous silicon

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 609-611

  Hamers, E A G ^a,b   Bezemer, J ^a   Van Der Weg, W F ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000907524     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124456     Document Type: Article

References (4)

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3. E. A. G. Hamers, W. G. J. H. M. van Sark, J. Bezemer, H. Meiling, and W. F. van der Weg, J. Non-Cryst. Solids 226, 205 (1998).
4. D. A. Doughty, J. R. Doyle, G. H. Lin, and A. Gallagher, J. Appl. Phys. 67, 6220 (1990).