Si/Si1-xGex dots grown by selective epitaxy

Semiconductor Science and Technology

Volumn 9, Issue 4, 1994, Pages 387-391

  Vescan, L ^a   Dieker, C ^a   Hartmann, A ^a   Van Der Hart, A ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

SELECTIVE EPITAXY; SINGLE LAYER SIGE; SINGLE QUANTUM WELL;

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; MATERIALS SCIENCE; SEMICONDUCTING SILICON COMPOUNDS;

SEMICONDUCTING SILICON;

EID: 0028409073     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/9/4/009     Document Type: Article

References (0)