InGaAs/GaAs Tetrahedral-Shaped recess quantum dot (TSR-QD)Technology

IEICE Transactions on Electronics

Volumn E79-C, Issue 11, 1996, Pages 1557-1560

  Awano, Yuji ^a   Sakuma, Yoshiki ^b   Sugiyama, Yoshihiro ^c   Sekiguchi, Takashi ^c   Muto, Shunichi ^b   Yokoyama, Naoki ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; MOVPE; Nanometer technology; Photoluminescence; Quantum dot; Self organization

Indexed keywords

CATHODOLUMINESCENCE; COMPOSITION EFFECTS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; ETCHING; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; MICROANALYSIS; NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSMISSION ELECTRON MICROSCOPY;

CARRIER CONFINEMENT; CATHODOLUMINESCENCE MEASUREMENT; DIAMAGNETIC SHIFT; NANOMETER TECHNOLOGY; TETRAHEDRAL SHAPED RECESS QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030288682     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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