Current-voltage characteristic of asymmetric ferroelectric capacitors

Journal of Physics D: Applied Physics

Volumn 29, Issue 2, 1996, Pages 457-461

  Zheng, Lirong ^a   Lin, Chenglu ^a   Ma, Tso Ping ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CALCULATIONS; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRON TUNNELING; FERROELECTRIC DEVICES; LEAKAGE CURRENTS; MATHEMATICAL MODELS;

ASYMMETRIC FERROELECTRIC CAPACITORS; ENERGY BAND; SCHOTTKY MODEL; VOLTAGE;

CAPACITORS;

EID: 0030082099     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/2/025     Document Type: Article

References (15)

1. Larsen P K, Cuppens R and Spierings G A C M 1992 Ferroelectrics 128 265
2. Boundurant D 1990 Ferroelectrics 112 273
3. Scott J F and Araujo C A 1989 Science 246 1400
4. Grill A, Beach D, Smart C and Kane W 1990 Mater. Res. Soc. Symp. Proc. 310 189
5. Lichtenwalner D J, Dat R, Auciello O and Kingo A I 1994 Ferroelectrics 152 97
6. Scott J F, Araujo C A, Melnick B M, McMillian L D and Zuleeg R 1991 J. Appl. Phys. 70 382
7. Wu S Y 1974 IEEE Trans. Electron Devices 21 499
8. Aoki K, Fukuda Y and Nishimura A 1993 Japan. J. Appl. Phys. 32 4147
9. Yoo I K, Desu S B and Xing J 1993 Mater. Res. Soc. Symp. Proc. 310 165
10. Jaffe B, Cook W R and Jaffe M 1971 Piezoelectric Ceramics (New York: Academic)
11. Brennan C J 1991 Proc. of 3rd Int. Symp. Integr. Ferroelectrics (1991) Colorado Springs, CO p 354
12. Teowee G and Uhlmann D R 1993 Mater. Res. Soc. Symp. Proc. 310 415
13. Simmons JG 1963 J. Appl. Phys. 34 1793
14. Zheng L, Chen Y, Lin C, Luo W and Zou S 1995 Integr. Ferroelectrics 9 69
15. Zheng L, Chen Y, Zhang S, Luo W and Lin C 1995 Integr. Ferroelectrics 9 63