Optical spectra and Auger recombination in SiGe/Si heterostructures in 10 μm range of wavelengths

Superlattices and Microstructures

Volumn 19, Issue 1, 1996, Pages 25-32

  Corbin, E ^a   Williams, C J ^a   Wong, K B ^a   Turton, R J ^a   Jaros, M ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; EFFECTS; HETEROJUNCTIONS; INFRARED DETECTORS; LIGHT ABSORPTION; MICROSCOPIC EXAMINATION; MONOLAYERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

AUGER RECOMBINATION; EMPIRICAL PSEUDOPOTENTIAL METHOD; OPTICAL SPECTRA; VALENCE BAND OFFSET;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029755365     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0004     Document Type: Article

References (7)

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4. E. Corbin, K. B. Wong and M. Jaros, Phys. Rev. B 50, 2339 (1994).
5. P. T. Landsberg, Recombination in Semiconductors, Cambridge University Press, Cambridge: (1991).
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7. P. Boucaud, L. Gao, F. Visocekas, Z.- Moussa, J.-M. Lourtioz, F. H. Julien, Appl. Phys. Lett. (1995). (In press.)