Photoinduced infrared spectroscopy of bound-to-bound and bound-to-continuum transitions in SiGe/Si quantum wells

Superlattices and Microstructures

Volumn 19, Issue 1, 1996, Pages 33-38

  Boucaud, P ^a   Wu, L ^a   Moussa, Z ^a   Julien, F H ^a   Lourtioz, J M ^a   Sagnes, I ^b   Campidelli, Y ^b   Badoz, P A ^b  

^a UNIV PARIS SUD   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; LIGHT MODULATORS; LIGHT POLARIZATION; OPTICAL PUMPING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPY;

INFRARED MODULATION; INFRARED PHOTODETECTORS; INTERBAND OPTICAL EXCITATION; INTERSUBBAND TRANSITION; PHOTOINDUCED INFRARED SPECTROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029776135     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0005     Document Type: Article

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