Quantum-sized silicon precipitates in silicon-implanted and pulse-annealed silicon dioxide films: photoluminescence and structural transformations

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 453-458

  Tyschenko, I E ^a   Kachurin, G A ^a   Zhuravlev, K S ^a   Pazdnikov, N A ^a   Volodin, V A ^a   Gutakovsky, A K ^a   Leier, A F ^a   Frob, H ^a   Leo, K ^a   Bohme, T ^a   Rebohle, L ^a   Yankov, R A ^a   Skorupa, W ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; INCLUSIONS; ION IMPLANTATION; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; PHASE TRANSITIONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICA;

QUANTUM SIZED SILICON PRECIPITATE; SILICON DIOXIDE FILMS;

SEMICONDUCTING FILMS;

EID: 0030359499     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-453     Document Type: Conference Paper

References (9)