Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

Semiconductor Science and Technology

Volumn 8, Issue 6, 1993, Pages 998-1010

  Gibbon, M ^a   Stagg, J P ^a   Cureton, C G ^a   Thrush, E J ^a   Jones, C J ^a   Mallard, R E ^b   Pritchard, R E ^b   Collis, N ^b   Chew, A ^b  

^a NORTEL NETWORKS   (Canada)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY DISPERSIVE X-RAY ANALYSIS; GALLIUM ARSENIDE INDIUM PHOSPHORUS SEMICONDUCTORS; LOW PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); SECONDARY-ION MASS SPECTROMETRY; SPATIALLY RESOLVED PHOTOLUMINESCENCE;

CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; EPITAXIAL GROWTH; MASS SPECTROMETRY; MICROSCOPIC EXAMINATION; ORGANOMETALLICS; PHOTOLUMINESCENCE; X RAY ANALYSIS;

SEMICONDUCTING FILMS;

EID: 0027617602     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/6/006     Document Type: Article

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