Bi-self-trapped-exciton model for frenkel defect formation in amorphous (formula presented) by proton irradiation

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 15, 1999, Pages 10616-10619

  Hosono, Hideo ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000488131     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.10616     Document Type: Article

References (35)

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17. It is more appropriate to define EED as the electronic energy deposition per unit volume to obtain the electron-hole pair concentration. For laser irradiation, EED distribution is approximately uniform. For ion and electron irradiation, EED can be assumed to be distributed uniformly over the adiabatic radius (Formula presented) (see text or Ref. 23). Moreover, the energy variation of (Formula presented) is relatively weak. Thus the EED distribution per unit volume can be approximated by EED per unit length (Formula presented) This approximation is supported by the fact that the defect formation by electrons (Ref. 13) and ions (Refs. 14 and 15) is found to be nearly proportional to (Formula presented) For x- and γ-ray irradiation, the situation is more complicated because photoionization and Compton processes play a role.
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