Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV-1 cm-2 range

Applied Physics Letters

Volumn 62, Issue 23, 1993, Pages 2977-2979

  Wang, Z ^a   Lin, M E ^a   Biswas, D ^a   Mazhari, B ^a   Teraguchi, N ^a   Fan, Z ^a   Gui, X ^a   Morkoc H ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000788230     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.109162     Document Type: Article

References (10)