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Physical Review B - Condensed Matter and Materials Physics

Volumn 54, Issue 12, 1996, Pages 8769-8781

Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations

(8) Newman, R a Ashwin, M a Fahy, M a Hart, L a Holmes, S a Roberts, C a Zhang, X a Wagner, J b

a IMPERIAL COLLEGE LONDON (United Kingdom)

b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000791582 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.54.8769 Document Type: Article

Times cited : (25)

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