Ga+ focused-ion-beam exposure and CF4 reactive-ion-etching development of Si3N4 resist optimized by Monte Carlo simulation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1161-1166

  Lee, Hyun Yong ^a   Chung, Hong Bay ^a  

^a Kwangwoon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000428009     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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