Amorphous Se75Ge25 resist profile simulation of focused-ion-beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 A, 1997, Pages 2409-2414

  Lee, Hyun Yong ^a   Chung, Hong Bay ^a  

^a Kwangwoon University   (South Korea)

Author keywords

Amorphous Se75Ge25 resist; Deposited energy density; Focused ion beam lithography; Monte Carlo simulation; Simplified development model

Indexed keywords

DEPOSITED ENERGY DENSITIES; FOCUSED ION BEAM (FIB) LITHOGRAPHY;

AMORPHOUS FILMS; COMPUTER SIMULATION; MONTE CARLO METHODS; SEMICONDUCTING SELENIUM COMPOUNDS; SOLUTIONS; THIN FILMS;

ION BEAM LITHOGRAPHY;

EID: 0031121925     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.2409     Document Type: Article

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