50-nm metal line fabrication by focused ion beam and oxide resists

Japanese Journal of Applied Physics

Volumn 30, Issue 11S, 1991, Pages 3246-3249

  Koshida, Nobuyoshi ^a,b   Yoshida, Kazuyoshi ^a,b   Watanuki, Shinichi ^a,b   Komuro, Masanori ^a,b   Atoda, Nobufumi ^c  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c SORTEC   (Japan)

Author keywords

Focused ion beam; Inorganic resist; Lithography; Mo03; Refractory metal; Thin amorphous film; Ultrafine wiring; W03

Indexed keywords

GALLIUM AND ALLOYS; MOLYBDENUM COMPOUNDS; REFRACTORY METALS - ETCHING; SEMICONDUCTING SILICON; TUNGSTEN COMPOUNDS;

FOCUSED ION BEAMS; OXIDE RESISTS;

ION BEAMS;

EID: 0026259212     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.30.3246     Document Type: Article

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