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Volumn 73, Issue 3, 1996, Pages 129-136
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Cross-sectional transmission electron microscopy and scanning tunnelling microscopy applied to investigation of phase segregation in III-V multilayers grown by molecular beam epitaxy
a,c a a b b |
Author keywords
[No Author keywords available]
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Indexed keywords
ALLOYS;
CRYSTAL LATTICES;
ELECTRONIC STRUCTURE;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
MULTILAYERS;
PHASE SEPARATION;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING INDIUM COMPOUNDS;
SUBSTRATES;
SURFACES;
TRANSMISSION ELECTRON MICROSCOPY;
CONTRAST FLUCTUATIONS;
CONTRAST VARIATION;
PHASE SEGREGATION;
STRAIN INDUCED DISTORTION;
WAVELENGTH;
SEMICONDUCTOR GROWTH;
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EID: 0030107078
PISSN: 09500839
EISSN: 13623036
Source Type: Journal
DOI: 10.1080/095008396180939 Document Type: Article |
Times cited : (6)
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References (7)
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