Sub-0.1 μm patterning characteristics of inorganic thin films by focused-ion-beam lithography

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6792-6796

  Lee, Hyun Yong ^a   Paek, Seung Woo ^a   Chung, Hong Bay ^a  

^a Seoul Womenx's University   (South Korea)

Author keywords

CF4 reactive ion etching; Columnar structure; Focused ion beam; Image contrast; Se75Ge25 inorganic thin film; Sensitivity; Si3N4; Sub 0.1 m patterning

Indexed keywords

EID: 0000283330     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6792     Document Type: Article

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