Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 5, 1998, Pages 2887-2890

  Chen, Xiaomeng ^a   Frisch, Harry L ^a   Kaloyeros, Alain E ^a   Arkles, Barry ^b  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b Gelest Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000257061     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590288     Document Type: Article

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