Improvement of gas-sensing properties of a Pd/SnO2 sensor by SiO2 coating films formed by dipping method

Journal of the Ceramic Society of Japan

Volumn 106, Issue 1, 1998, Pages 84-88

  Wada, Kenzi ^a   Egashira, Makoto ^b  

^a SASEBO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NAGASAKI UNIVERSITY   (Japan)

Author keywords

CH3Si(C2H5O)3; Dip coating; H2 sensor; Pd SnO2; Semiconductor; SiO2 film

Indexed keywords

CALCINATION; CRACK INITIATION; DECOMPOSITION; PALLADIUM; POLYMERIZATION; POROUS MATERIALS; PROTECTIVE COATINGS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SINTERING; TIN COMPOUNDS;

DIP COATING;

CHEMICAL SENSORS;

EID: 0031656401     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.106.84     Document Type: Article

References (14)

1. M. Egashira and Y. Shimizu, Proc. of SPIE Int. Conf. Thin Film Physics and Applications, Vol. 1519, Shanghai, SPIE (1991) pp. 467-76.
2. S. R. Morrison, Sensors and Actuators, 12, 425-40 (1987).
3. M. Shiratori, M. Katsura and T. Tsuchiya, Proc. 1st Int. Mtg. Chemical Sensors, Sep. 19-22, Fukuoka, Japan (1983) pp. 119-24.
4. K. Fukui and K. Komatsu, Proc. 1st Int. Mtg. Chemical Sensors, Sep. 19-22, Fukuoka, Japan (1983) pp. 52-56.
5. Y. Okayama, Proc. 6th Sensors Sympo., IEEE of Japan, Tokyo (1986) pp. 101-05.
6. Y. Shimizu, C.-D. Feng, Y. Nakamura and M. Egashira, Proc. 1st Int. Conf. Intelligent Materials, 1992, Kanagawa (1993) pp. 123-26.
7. C.-D. Feng, Y. Shimizu and M. Egashira, Denki Kagaku, 61, 905-06 (1993).
8. C.-D. Feng, Y. Shimizu and M. Egashira, J. Electrochem. Soc., 141, 220-25 (1994).
9. K. Izumi, H. Tanaka, Y. Uchida, N. Tohge and T. Minami, J. Non-Cryst Solids, 147&148, 483-87 (1992).
10. S. Sakka, Y. Tanaka and T. Kokubo, J. Non-Cryst. Solids, 82, 24-30 (1986).