Metal-to-insulator transition in sputter deposited 3Ni/Al thin films

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 2609-2616

  ng, H P ^a   Ngan, A H W ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; BINARY ALLOYS; CHEMICAL ANALYSIS; DEPOSITION; DISSOLVED OXYGEN; FILM THICKNESS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE CONSTANTS; METAL INSULATOR TRANSITION; NANOCRYSTALS; NICKEL ALLOYS; NICKEL COMPOUNDS; TEMPERATURE DISTRIBUTION;

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEPOSITION TEMPERATURES; ELECTRICAL RESISTANCES; FACE CENTERED CUBIC STRUCTURE; METAL-TO-INSULATOR TRANSITIONS; NANO-CRYSTALLINE STRUCTURES; NICKEL-ALUMINUM ALLOY; TEMPERATURE DEPENDENCE;

THIN FILMS;

EID: 0000153821     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1286773     Document Type: Article

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