Noise mechanisms in superconducting tunnel-junction detectors

Applied Physics Letters

Volumn 76, Issue 26, 2000, Pages 3998-4000

  Segall, K ^a   Wilson, C ^a   Frunzio, L ^a   Li, L ^a   Friedrich, S ^a,c   Gaidis, M C ^a,d   Prober, D E ^a   Szymkowiak, A E ^b   Moseley, S H ^b  

^a Yale University   (United States)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^d CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000042067     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126796     Document Type: Article

References (17)

1. N. Booth and D. J. Goldie, Supercond. Sci. Technol. 9, 493 (1996); for the Fano factor and ∈ for Sn, see M. Kurakado, Nucl. Instrum. Methods Phys. Res. A 196, 275 (1982); for Nb, see N. Rando, A. Peacock, A. van Dordrecht, C. Foden, R. Engelhardt, B. G. Taylor, and P. Gare, ibid. 313, 173 (1992); we assume Ta to be similar to these two metals.
2. N. Booth and D. J. Goldie, Supercond. Sci. Technol. 9, 493 (1996); for the Fano factor and ∈ for Sn, see M. Kurakado, Nucl. Instrum. Methods Phys. Res. A 196, 275 (1982); for Nb, see N. Rando, A. Peacock, A. van Dordrecht, C. Foden, R. Engelhardt, B. G. Taylor, and P. Gare, ibid. 313, 173 (1992); we assume Ta to be similar to these two metals.
3. N. Booth and D. J. Goldie, Supercond. Sci. Technol. 9, 493 (1996); for the Fano factor and ∈ for Sn, see M. Kurakado, Nucl. Instrum. Methods Phys. Res. A 196, 275 (1982); for Nb, see N. Rando, A. Peacock, A. van Dordrecht, C. Foden, R. Engelhardt, B. G. Taylor, and P. Gare, ibid. 313, 173 (1992); we assume Ta to be similar to these two metals.
4. P. Verhoeve, N. Rando, A. Peacock, A. van Dordrecht, B. G. Taylor, and D. J. Goldie, Appl. Phys. Lett. 72, 3359 (1998); P. Verhoeve, N. Rando, A. Peacock, A. van Dordrecht, and A. Poelaert, IEEE Trans. Appl. Supercond. 7, 3359 (1997); J. B. le Grand, C. A. Mears, L. J. Hiller, M. Frank, S. E. Labov, H. Netel, D. Chow, S. Friedrich, M. A. Lindeman, and A. T. Barfknecht, Appl. Phys. Lett. 73, 1295 (1998).
5. P. Verhoeve, N. Rando, A. Peacock, A. van Dordrecht, B. G. Taylor, and D. J. Goldie, Appl. Phys. Lett. 72, 3359 (1998); P. Verhoeve, N. Rando, A. Peacock, A. van Dordrecht, and A. Poelaert, IEEE Trans. Appl. Supercond. 7, 3359 (1997); J. B. le Grand, C. A. Mears, L. J. Hiller, M. Frank, S. E. Labov, H. Netel, D. Chow, S. Friedrich, M. A. Lindeman, and A. T. Barfknecht, Appl. Phys. Lett. 73, 1295 (1998).
6. P. Verhoeve, N. Rando, A. Peacock, A. van Dordrecht, B. G. Taylor, and D. J. Goldie, Appl. Phys. Lett. 72, 3359 (1998); P. Verhoeve, N. Rando, A. Peacock, A. van Dordrecht, and A. Poelaert, IEEE Trans. Appl. Supercond. 7, 3359 (1997); J. B. le Grand, C. A. Mears, L. J. Hiller, M. Frank, S. E. Labov, H. Netel, D. Chow, S. Friedrich, M. A. Lindeman, and A. T. Barfknecht, Appl. Phys. Lett. 73, 1295 (1998).
7. S. Friedrich, K. Segall, M. C. Gaidis, C. M. Wilson, D. E. Prober, A. E. Szymkowiak, and S. H. Moseley, Appl. Phys. Lett. 71, 3901 (1997).
8. K. Segall, C. M. Wilson, L. Li, A. K. Davies, R. Lathrop, M. C. Gaidis, D. E. Prober, A. E. Szymkowiak, and S. H. Moseley, IEEE Trans. Appl. Supercond. 9, 3226 (1999).
9. R. C. Alig, S. Bloom, and C. W. Struck, Phys. Rev. B 22, 5565 (1980).
10. Transition-edge superconductor detectors can also provide single-photon energy resolution in the UV/visible of the same order as the STJs.
11. S. B. Kaplan, C. C. Chi, D. N. Langenberg, J. J. Chang, S. Jafarey, and D. J. Scalapino, Phys. Rev. B 14, 4854 (1976).
12. hatt.
13. We have considered only processes which originate from the trap. The cancellation of processes from the counterelectrode (backtunneling and reverse tunneling) also contributes a small voltage dependence.
14. K. Segall, Ph.D. thesis, Yale University: K. Segall et al. (unpublished).
15. A. Poelaert, A. Kozorezov, A. Peacock, K. Wigmore, P. Verhoeve, A. van Dordrecht, A. Owens, and N. Rando, Proc. SPIE 3445, 214 (1998).
16. 1/2) for voltage and current noise, respectively.
17. The statistical noise due to Eq. (3) is 5.0 eV for the present device and 2.8 eV in the projected device. The remaining statistical noise from backtunneling, absorber loss, and multiplication upon trapping is 7.1 eV in the present device and 3.8 eV in the projected one; see Ref. 10.