Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 603-608

  Shenai, Deodatta V ^a   Timmons, Michael L ^a   Dicarlo Jr , Ronald L ^a   Marsman, Charles J ^a  

^a ROHM AND HAAS COMPANY   (United States)

Author keywords

A3. Metalorganic vapour phase epitaxy; Al. Charcterization; Al. Semiconducting indium phosphide; B1. Precursors; B1. Tertiarybutylphosphine; B2. Semiconducting indium phosphide; Bl. Metalorganics; Bl. Trimethylindium

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC PROPERTIES; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; PURIFICATION; SYNTHESIS (CHEMICAL);

CARACTERIZATION; CARRIER GAS; CHANNEL FORMATION; PRECURSORS; TERTIARYBUTYLPHOSPHINE; TRIMETHYLLINDIUM;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 9944265660     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.09.006     Document Type: Conference Paper

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