Relaxor properties of lanthanum-doped bismuth layer-structured ferroelectrics

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5697-5700

  Chen, Xiao Bing ^a   Hui, Rong ^a   Zhu, Jun ^a   Lu, Wang Ping ^a   Mao, Xiang Yu ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); HYSTERESIS; LANTHANUM; NATURAL FREQUENCIES; PERMITTIVITY; PEROVSKITE; RAMAN SCATTERING;

BISMUTH LAYER-STRUCTURED FERROELECTRICS (BLSFS); FERROELECTRIC RELAXORS; RELAXOR PROPERTIES; SOLID STATE REACTION;

FERROELECTRIC CERAMICS;

EID: 9944260435     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1807029     Document Type: Article

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