Crystallization kinetics of Cu/a-Si bilayer recording film under thermal and pulsed laser annealing

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5563-5568

  Her, Yung Chiun ^a   Wu, Chun Lin ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COOLING; CRYSTALLIZATION; GRAIN GROWTH; HEAT TRANSFER; HEATING; NUCLEATION; REACTION KINETICS; REFLECTION; SILICON; SPECIFIC HEAT; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLIZATION KINETICS; INSTANTANEOUS NUCLEATION; PULSED LASER ANNEALING; THERMAL ANNEALING;

COPPER;

EID: 9944228259     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1803606     Document Type: Article

References (27)

1. S. Ohkubo, T. Ide, and M. Okada, Tech. Dig. Optical Data Storage 4342, 34 (2001).
2. A. E. Robertson, L. G. Hultman, H. T. G. Hentzell, S.-E. Hornstrom, G. Shaofang, and P. A. Psaras, J. Vac. Sci. Technol. A 5, 1447 (1987).
3. L. Hultman, A. Robertson, H. T. G. Hentzell, I. Engstrom, and P. A. Psaras, J. Appl, Phys. 62, 3647 (1987).
4. S. F. Gong, A, Robertson, H. T. G. Hentzell, and X.-H. Li, J. Appl. Phys. 68, 4535 (1990).
5. Z. Jin, G. A. Bhat, M. Yeung, H. S. Kwok, and M. Wong, J. Appl. Phys. 84, 194 (1998).
6. J.-B. Lee, C.-J. Lee, and D.-K. Choi, Jpn. J, Appl. Phys., Part 1 40, 6177 (2001).
7. H. Inoue, K. Mishima, M. Aoshima, H. Hirata, T. Kato, and H. Utsunomiya, Jpn. J. Appl. Phys., Part 1 42, 1059 (2003).
8. Y. Kawazu, H. Kudo, S. Onari, and T. Arai, Jpn. J. Appl. Phys., Part 1 29, 2698 (1990).
9. S. W. Russell, J. Lee, and J, W. Mayer, J, Appl. Phys. 70, 5153 (1991).
10. H. E. Kissinger, Annl. Chem. 29, 1702 (1957).
11. T. E. Schlesinger, R. C. Cammarata, and S. M. Prokes, Appl. Phys. Lett. 59, 449 (1991).
12. L. A. Clevenger, V. C. Thompson, R. C. Cammarata, and K. N. Tu, Appl. Phys. Lett. 52, 795 (1988).
13. J. G. Hernandez and R. Tsu, Appl. Phys. Lett. 42, 90 (1983).
14. M. Avrami, J. Chem. Phys. 7, 1103 (1939).
15. M. Avrami, J. Chem. Phys. 8, 212 (1940).
16. M. Avrami, J. Chem. Phys. 9, 177 (1941).
17. N. Ohshima, J. Appl. Phys. 79, 8357 (1996).
18. M. O. Thompson, G. J. Galvin, J. W. Mayer, P. S. Peercy, J. M. Poate, D. C. Jacobson, A. G. Cullis, and N. G. Chew, Phys. Rev. Lett. 52, 2360 (1984).
19. R. Ishihara, W.-C. Yeh, T. Hattori, and M. Matsumura, Jpn. J. Appl. Phys., Part 1 34, 1759 (1995).
20. S. Higashi and T. Sameshima, Jpn. J. Appl. Phys., Part 1 40, 480 (2001).
21. C. Peng, L. Cheng, and M. Mansuripur, J. Appl. Phys. 82, 4183 (1997).
22. M. Miyamoto, A. Hirotsune, Y. Miyauchi, K. Ando, M. Terao, N. Tokusyuku, and R. Tamura, IEEE J. Sel. Top. Quantum Electron. 4, 826 (1998).
23. S. Adach, Optical Constants of Crystalline and Amorphous Semiconductors (Kluwer Academic, Massachusetts, 1999).
24. S. Moon, M. Hatano, M. Lee, and C. P. Grigoropoulos, Int. J. Heat Mass Transfer 45, 2439 (2002).
25. G. Auvert, D. Bensahel, A. Perio, V. T. Nguyen, and G. A. Rozgonyi, Appl. Phys. Lett. 39, 724 (1981).
26. A. Prasad, K. Ebihara, P. K. John, B. Y. Tong, S. K. Wong, and K. P. Chik, J. Appl. Phys. 54, 5760 (1983).
27. J. Narayan, S. J. Pennycook, D. Fathy, and O. W. Holland, J. Vac. Sci. Technol. A 2, 1495 (1984).