An Effective Potential Approach to Modeling 25 nm MOSFET Devices

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 113-117

  Ahmed, S ^a   Ringhofer, C ^b   Vasileska, D ^a  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

effective potentials; quantum thermodynamics

Indexed keywords

BOLTZMANN EQUATION; QUANTUM CHEMISTRY; THERMODYNAMICS;

CLASSICAL TRANSPORT; EFFECTIVE POTENTIALS; GATE OXIDE BARRIERS; QUANTUM INTERACTIONS; QUANTUM POTENTIALS; QUANTUM THERMODYNAMICS; SEMICONDUCTOR DEVICE SIMULATION; THERMODYNAMIC APPROACHES;

MOSFET DEVICES;

EID: 9644301575     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011409.76632.70     Document Type: Article

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