An extended analytical approximation for the MOSFET surface potential

Solid-State Electronics

Volumn 49, Issue 2, 2005, Pages 267-270

  Chen, T L ^a   Gildenblat, G ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Lateral field gradient; MOSFET; Surface potential

Indexed keywords

ALGORITHMS; APPROXIMATION THEORY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; MATHEMATICAL MODELS; TRANSCONDUCTANCE; TRANSISTORS;

GRADUAL CHANNEL APPROXIMATION (GCA); LATERAL FIELD GRADIENT; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 9544252189     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.07.016     Document Type: Article

References (8)

1. Miura-Mattausch M, Jacob H. Analytical model for circuit simulation with quarter micron metal oxide semiconductor field effect transistors: subthreshold characteristics. Jpn J Appl Phys 1990;29(12):L2279-82.
2. Gildenblat G, Arora ND, Sung R, Bendix P. A Scalable surface potential based compact MOSFET model. In: Proc. 1997 Int Dev Res Symp. p. 333-6.
3. Van Langevelde R, Klassen FM. An explicit surface-potential-based MOSFET model for circuit simulation. Solid-State Electron 2000;44:409-18.
4. Chen T-L, Gildenblat G. Analytical approximation for the MOSFET surface potential. Solid-State Electron 2001;45:335-9.
5. Turchetti C, Masetti GA. CAD-oriented analytical MOSFET model for high-accuracy applications. IEEE Trans Comput-Aid Des 1984;CAD-3:117-22.
6. Howes R, Redman-White W, Nichols KG, Mole PJ, Robinson MJ, Bird S. An SOS MOSFET model based on calculation of the surface potential. IEEE Trans Comput-Aid Des 1994;CAD-13:494-506.
7. Nguen TN, Plummer JD. Physical mechanisms responsible for short-channel effects in MOS devices. IEDM Techn Dig 1981; 1:596-9.
8. Brews JR. A charge-sheet model of the MOSFET. Solid-State Electron 1978;21:345-55.