Secondary-ion mass spectrometry of photosensitive heterophase semiconductor

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 226, Issue 4, 2004, Pages 595-600

  Rokakh, A G ^a,b   Zhukov, A G ^a   Stetsura, S V ^a   Serdobintsev, A A ^a,b  

^a SARATOV STATE UNIVERSITY   (Russian Federation)

^b NONE   (Russian Federation)

Author keywords

Heterophase semiconductor; Photosensitivity; SIMS; Surface charging

Indexed keywords

ANNEALING; ELECTRON MULTIPLIERS; HALL EFFECT; ION BEAMS; ION BOMBARDMENT; IRRADIATION; LIGHTING; PHOTOELECTRIC DEVICES; PHOTOSENSITIVITY; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS;

CHARGED OXYGEN IONS; HETEROPHASE SEMICONDUCTOR; MASS-SPECTRUM SHIFTS; SURFACE CHARGING;

SECONDARY ION MASS SPECTROMETRY;

EID: 9544246758     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.08.009     Document Type: Article

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