Stabilizing effect of doping with PbS on properties of CdS xSe 1-x wide-gap photoconductors

Inorganic Materials

Volumn 35, Issue 5, 1999, Pages 452-454

  Rokakh, A G ^a   Stetsyura, S V ^a   Trofimova, N B ^a   Elagina, N V ^a  

^a SARATOV STATE UNIVERSITY   (Russian Federation)

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EID: 9544219960     PISSN: 00201685     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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2. 6 (Phase Diagrams of II-VI Semiconductor Systems), Kiev: Naukova Dumka, 1982, pp. 59-60.
3. Ryvkin, S.M., Fotoelektricheskie yavleniya v poluprovodnikakh (Photoelectric Effects in Semiconductors), Leningrad: Fizmatgiz, 1963, p. 66.
4. xS Films, Fiz. Tekh. Poluprovodn. (Leningrad), 1984, vol. 18, no. 4, pp. 631-634.
5. Mirkin, L.I., Rentgenostrukturnyi analiz: Inditsirovanie rentgenogramm (X-ray Diffraction Analysis: Indexing of X-ray Patterns), Moscow: Nauka,-1981.
6. Roth, W.L., Crystallography, Physics and Chemistry of II-VI Compounds, Aven, M. and Prener, J.S., Eds., Amsterdam: North-Holland, 1967.
7. 6, Moscow: Mir, 1970, pp. 107-110.
8. Oleinik, G.S., Mizetskii, P.A., Nizkova, A.I., et al., Phase Diagram of the CdS-PbS System, Izv. Akad. Nauk SSSR, Neorg. Mater., 1983, vol. 19, no. 11, pp. 1799-1801.
9. Rokakh, A.G., A Variable-Gap Model for Degradation-Resistant Semiconductors, Pis'ma Zh. Tekh. Fiz., 1984, vol. 10, no. 13, pp. 820-823.