An interband tunnel oscillator: Intrinsic bistability and hysteresis of trapped hole charge in a double-barrier structure

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 237-245

  Buot, F A ^a,b,c,d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^c Department of Obstetrics Gynecology   (United States)

^d Washington Academy of Sciences   (United States)

Author keywords

Hysteresis; Intrinsic bistability; Limit cycle; Resonant tunneling devices; Self oscillation; Trapped holes; Zener effect

Indexed keywords

HOLE TRAPS; HYSTERESIS; OSCILLATIONS; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; ZENER EFFECT;

INTERBAND TUNNEL OSCILLATORS; INTRINSIC BISTABILITY; RESONANT TUNNELING DEVICES; TRAPPED HOLE CHARGE;

TUNNEL DIODE OSCILLATORS;

EID: 0032315202     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/43956     Document Type: Article

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