Comparison between epi-down and epi-up bonded high-power single-mode 980-nm semiconductor lasers

IEEE Transactions on Advanced Packaging

Volumn 27, Issue 4, 2004, Pages 640-646

  Liu, Xingsheng ^a   Hu, Martin Hai ^a   Nguyen, Hong Ky ^a   Caneau, Catherine G ^a   Rasmussen, Michael Heath ^a   Davis Jr , Ronald W ^a   Zah, Chung En ^a  

^a Corning Incorporated ^*  (United States)

Author keywords

Epi down bonding; Pump laser; Reliability; Semiconductor laser; Thermal management; Thermal stress

Indexed keywords

BONDING; ELECTRONICS PACKAGING; HEAT RESISTANCE; HIGH POWER LASERS; LASER MODES; OPTICAL PROPERTIES; PUMPING (LASER); RELIABILITY; THERMAL STRESS; THERMODYNAMIC PROPERTIES;

EPI-DOWN BONDING; EPI-UP BONDING; LASER RELIABILITY; OPTICAL PERFORMANCES; PUMP LASER; SINGLE MODE SEMICONDUCTOR LASERS; THERMAL BEHAVIOR; THERMAL MANAGEMENT;

SEMICONDUCTOR LASERS;

EID: 9244248143     PISSN: 15213323     EISSN: None     Source Type: Journal    
DOI: 10.1109/TADVP.2004.831862     Document Type: Article

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